High Quality Dimond Processing Device

Jun 26 2006nbsp018332Abstract Using highquality polycrystalline chemicalvapordeposited diamond films with large grains spl sim100 m field effect transistors FETs with gate lengths of 01 m were fabricated From the RF characteristics the maximum transition frequency f T and the maximum frequency of oscillation f max were spl sim 45 and spl sim 120 GHz respectively